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Applied Physics Letters

Volumn 97, Issue 6, 2010, Pages

Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates

(6) Yuk, J M a Lee, J Y a Kim, Y b No, Y S c Kim, T W c Choi, W K d

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

c Hanyang University (South Korea)

d Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE X RAY SPECTROSCOPY; FORMATION MECHANISM; HETEROSTRUCTURES; MASS DIFFUSION; NANODOTS; SI SUBSTRATES; SI(1 0 0); ZNO THIN FILM;

DEPOSITION; GRAIN BOUNDARIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC FILMS; OPTICAL FILMS; SILICON; THIN FILMS; VAPOR DEPOSITION; X RAY SPECTROSCOPY; ZINC; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955760072 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3475016 Document Type: Article

Times cited : (11)

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