Thin crystalline silicon solar cells based on epitaxial films grown at 165 °c by RF-PECVD

Solar Energy Materials and Solar Cells

Volumn 95, Issue 8, 2011, Pages 2260-2263

  Cariou, Romain ^a   Labrune, Martin ^a,b   Roca I Cabarrocas, Pere ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b TOTAL   (France)

Author keywords

Epitaxy; Low temperature; PECVD; Si thin film; Solar cell

Indexed keywords

ABSORBER LAYERS; CRYSTALLINE SILICON SOLAR CELLS; CRYSTALLINE SILICON SUBSTRATES; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; HETEROJUNCTION SOLAR CELLS; INTRINSIC LAYER THICKNESS; LIGHT-TRAPPING; LOW TEMPERATURES; P-TYPE; RF-PECVD;

CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; CRYSTALLINE MATERIALS; ELECTRIC CONNECTORS; ELECTRIC SWITCHGEAR; EPITAXIAL FILMS; EPITAXIAL GROWTH; HETEROJUNCTIONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958162228     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.03.038     Document Type: Article

References (23)

1. R.B. Bergmann, C. Berge, T.J. Rinke, J. Schmidt, and J.H. Werner Advances in monocrystalline Si thin films solar cells by layer transfer Sol. Energy Mater. Sol. Cells 74 2002 213 218
2. 2 area offspec silicon substrate using porous silicon segmented mirrors Prog. Photovoltaics 18 2010 137 143
3. K. Alberi, I.T. Martin, M. Shub, C.W. Teplin, M.J. Romero, R.C. Reedy, E. Iwaniczko, A. Duda, P. Stradins, H.M. Branz, and D.L. Young Material quality requirements for efficient epitaxial film silicon solar cells Appl. Phys. Lett. 96 2010 073502
4. J.J.H. Gielis, P.J. van den Oever, B. Hoex, M.C.M. van de Sanden, and W.M.M. Kessels Real-time study of a-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy and second-harmonic generation Phys. Rev. B 77 2008 205329
5. S. De Wolf, and M. Kondo Abruptness of a-Si:H/c-Si interface revealed by carrier lifetime measurements Appl. Phys. Lett. 90 2007 042111
6. T. Wang, E. Iwaniczko, M. Page, D. Levi, Y. Yan, H. Branz, and Q. Wang Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells Thin Solid Films 501 2006 284 287 (Pubitemid 43245585)
7. J. Damon-Lacoste, and P. Roca i Cabarrocas Toward a better physical understanding of a-Si:H/c-Si heterojunction solar cells J. Appl. Phys. 105 2009 063712
8. M. Moreno, D. Daineka, and P. Roca i Cabarrocas Plasmas for texturing, cleaning and deposition: towards a one pump down process for heterojunction solar cells Phys. Status Solidi c 7 2010 1112 1115
9. M. Moreno, and P. Roca i Cabarrocas Ultra-thin crystalline silicon films produced by plasma assisted epitaxial growth on silicon wafers and their transfer to foreign substrates PV Direct 1 2010 10301
10. M. Bruel, B. Aspar, and A.-J. Auberton-Hervé Smart-cut: a new silicon on insulator material technology based on hydrogen implantation and wafer bonding Jpn. J. Appl. Phys. 36 1997 1636 1641
11. M. Labrune, M. Moreno, and P. Roca i Cabarrocas Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 °C by rf-PECVD Thin Solid Films 518 2010 2528 2530
12. G.W. Trucks, K. Raghavachari, G.S. Higashi, and Y.J. Chabal Mechanism of HF etching of silicon surfaces: a theoretical understanding of hydrogen passivation Phys. Rev. Lett. 65 1990 504
13. P. Roca i Cabarrocas, J.B. Chevrier, J. Huc, A. Lloret, J.Y. Parey, and J.P.M. Schmitt A fully automated hotwall multiplasmamonochamber reactor for thin film deposition J. Vac. Sci. Technol. A 9 1991 2331
14. 〈 http://www.pv.unsw.edu.au 〉.
15. D.E. Aspnes, and A.A. Studna Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs and InSb from 1.5 to 6.0 eV Phys. Rev. B 27 1983 985
16. G.E. Jellison Jr., V.I. Merkulov, A.A. Puretzky, D.B. Geohegan, G. Eres, D.H. Lowndes, and J.B. Caughman Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry Thin Solid Films 377378 2000 68 73 (Pubitemid 32035189)
17. D.A.G. Bruggeman Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen Annalen der Physik 416 1935 636 664
18. H.C. Neitzert, N. Layadi, P. Roca i Cabarrocas, R. Vanderhaghen, and M. Kunst In situ measurements of changes in the structure and in the excess charge-carrier kinetics at the silicon surface during hydrogen and helium plasma exposure J. Appl. Phys. 78 1995 1438
19. B. Drévillon Phase modulated ellipsometry from the ultraviolet to the infrared: in situ application to the growth of semiconductors Prog. Cryst. Growth Charact. Mater. 27 1993 1 87
20. P. Roca i Cabarrocas, T. Nguyen-Tran, Y. Djeridane, A. Abramov, E. Johnson, and G. Patriarche Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices J. Phys. D: Appl. Phys. 40 2007 2258 2266 (Pubitemid 46778350)
21. P. Roca i Cabarrocas, A. Fontcuberta i Morral, and Y. Poissant Growth and optoelectronic properties of polymorphous silicon thin films Thin Solid Films 403 2002 39 2002
22. S. Kasouit, J. Damon-Lacoste, R. Vanderhaghen, and P. Roca i Cabarrocas Contribution of plasma generated nanocrystals to the growth of microcrystalline silicon thin films J. Non-Cryst. Solids 338340 2004 86 90
23. S.-Y. Lien, and D.-S. Wuu Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot-wire CVD Prog. Photovoltaics 17 2009 489