Residual stress analysis on silicon wafer surface layers induced by ultra-precision grinding

Rare Metals

Volumn 30, Issue 3, 2011, Pages 278-281

  Zhang, Yinxia ^a   Wang, Dong ^a   Gao, Wei ^a   Kang, Renke ^b  

^a ZHENGZHOU UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

grinding; Raman spectroscopy; residual stresses; silicon wafers

Indexed keywords

ELASTIC-PLASTIC DEFORMATION; GRINDING MARKS; GROUND SURFACES; PILE-UPS; RAMAN MICROSPECTROSCOPY; SILICON WAFER SURFACE; STRAINED LAYERS; STRESS VALUES; ULTRAPRECISION GRINDING; WAFER SURFACE;

BRITTLE FRACTURE; COMPRESSIVE STRESS; ELASTIC DEFORMATION; ELASTOPLASTICITY; GRINDING (COMMINUTION); GRINDING (MACHINING); GRINDING MILLS; PHASE TRANSITIONS; PLASTIC DEFORMATION; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; STRESS ANALYSIS; STRESS CONCENTRATION; SURFACES; TENSILE STRESS;

SILICON WAFERS;

EID: 79958129713     PISSN: 10010521     EISSN: 18677185     Source Type: Journal    
DOI: 10.1007/s12598-011-0383-5     Document Type: Article

References (9)

1. H.K. Tönshoff W.V. Schmieden I. Inasakii W. König G. Spur 1990 Abrasive machining of silicon CIRP Ann. Manuf. Technol. 39 2 621 10.1016/S0007-8506(07)62999-0
2. Z.J. Pei A. Strasbaugh 2002 Fine grinding of silicon wafers: designed experiment Int. J. Mach. Tool. Manuf. 42 395 10.1016/S0890-6955(01)00123-7 (Pubitemid 34086435)
3. I. Zarudi L. Zhang 1996 Subsurface damage in single-crystal silicon due to grinding and polishing J. Mater. Sci. Lett. 15 586 10.1007/BF00579258 1:CAS:528:DyaK28XisVWgtL4%3D
4. J. Chen I. De Wolf 2003 Study of damage and stress induced by backgrinding in Si wafers Semicond. Sci. Technol. 18 261 10.1088/0268-1242/18/4/ 311 1:CAS:528:DC%2BD3sXjtl2gtrk%3D
5. I. De Wolf 1996 Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits Semicond. Sci. Technol. 11 139 10.1088/0268-1242/11/2/001
6. C.L. Chao K.J. Ma Y. Chang H.Y. Lin 2000 Relieving the residual stress on machined silicon wafers: a comparison between rapid thermal annealing (RTA) and chemical etching processes J. Chung Cheng Inst. of Technol. 29 1 63
7. Y. Gogotsi G.H. Zhou S.S. Ku S. Cetinkunt 2001 Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon Semicond. Sci. Technol. 16 345 10.1088/0268-1242/16/5/311 1:CAS:528:DC%2BD3MXktlSmur4%3D (Pubitemid 32836883)
8. V. Jardret H. Zahouani J.L. Loubet T.G. Mathia 1998 Understanding and quantification of elastic and plastic deformation during a scratch test Wear 218 8 10.1016/S0043-1648(98)00200-2 1:CAS:528:DyaK1cXktFKntbw%3D
9. Y.X. Zhang W. Gao R.K. Kang D.M. Guo 2008 Study on the hase transformations of the ground monocrystalline silicon wafers surfaces Opt. Precis. Eng. 16 8 1440 1:CAS:528:DC%2BD1cXhtlGksLzK