Phase transformations of grinding monocrystalline silicon wafer surfaces

Guangxue Jingmi Gongcheng/Optics and Precision Engineering

Volumn 16, Issue 8, 2008, Pages 1440-1445

  Zhang, Yin Xia ^a   Gao, Wei ^a   Kang, Ren Ke ^b   Guo, Dong Ming ^b  

^a ZHENGZHOU UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Grinding; Monocrystalline silicon wafer; Phase transformation

Indexed keywords

AMORPHOUS MATERIALS; DUCTILE FRACTURE; GRINDING (COMMINUTION); GRINDING (MACHINING); INTERMETALLICS; LAW ENFORCEMENT; METAL RECOVERY; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACES;

GRINDING; MONOCRYSTALLINE SILICON WAFER; PHASE TRANSFORMATION; PHASE TRANSFORMATIONS;

AMORPHOUS SILICON;

EID: 51649107022     PISSN: 1004924X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. CUI J F, ZHAO J, FAN ZH W, et al.. Study on LD-pumped Nd:YAG laser cutter for silicon wafer [J]. Opt. Precision Eng., 2006, 14(5): 829-834. (in Chinese)
2. KANG R K, TIAN Y B, GUO D M, et al.. Present status of research and application in ultra-precision grinding technology of large-scale silicon wafers [J]. Diamond and Abrasives Engineering, 2003, 136(4): 13-18. (in Chinese)
3. CAO ZH Q, ZHAO J, CHEN D X, et al.. Theory and experiment on hydrodynamic suspension ultra-smooth machining for silicon wafers [J]. Opt. Precision Eng., 2007, 15(7): 1084-1089. (in Chinese)
4. GOGOTSI Y, ZHOU G, KU S S, et al.. Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon [J]. Semiconductor Science Technology, 2001, 16: 345-352.
5. ZARUDI I, ZHANG L C. Structure changes in monocrystalline silicon subjected to indentation-experimental findings [J]. Tribology International, 1999, 32: 701-712.
6. ROBERTS S G. Fracture and Brittle-ductile Transition in Si, Properties of Crystalline Silicon [M]. London: INSPEC, the Institution of Electrical Engineers, 1999.
7. GOGOTSI Y, BAED C. Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon [J]. Semiconductor Science Technology, 1999, 14: 936-944.
8. KAILER A, GOGOTSI Y, NICKEL K G. Phase transformations of silicon caused by contact loading [J]. J. Appl. Phys., 1997, 81: 3057-3063.
9. ZHANG L C, ZARUDI I. Towards a deeper understanding of plastic deformation in monocrystalline silicon [J]. International J. Mechanical Sciences, 2001, 43: 1985-1996.
10. CRAIN J, ACKLAND G J, MACLEAN J R, et al.. Reversible pressure-induced transitions between metastable phases of silicon [J]. Physical Review B, 1994, 50(17): 13043-13046.
11. PIZANI P S, JASINEVICIUS R. Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering [J]. J. Materials Science Lett., 1999, 18: 1185-1187.
12. ZHANG Y X. Study on the surface layer damage of monocrystalline silicon wafer induced by ultra-precision grinding [D]. Dalian: Dalian University of Technology, 2006. (in Chinese)