Germanium-doped Czochralski silicon for photovoltaic applications

Solar Energy Materials and Solar Cells

Volumn 95, Issue 8, 2011, Pages 2466-2470

  Wang, Peng ^a   Yu, Xuegong ^a   Chen, Peng ^a   Li, Xiaoqiang ^a   Yang, Deren ^a   Chen, Xue ^b   Huang, Zhenfei ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b State Key Laboratory for Photovoltaic Science and Technology   (China)

Author keywords

Czochralski silicon; Germanium doping; Light induced degradation; Mechanical strength; Solar cells

Indexed keywords

BORON-OXYGEN; CELL FABRICATIONS; CZ SILICON; CZOCHRALSKI; CZOCHRALSKI SILICON; GE CONCENTRATIONS; GE-DOPING; GERMANIUM DOPING; LIGHT-INDUCED DEGRADATION; PHOTOVOLTAIC APPLICATIONS; POWER OUT PUT; PV MODULES;

CARRIER LIFETIME; DEFECTS; DEGRADATION; GERMANIUM; PHOTOVOLTAIC EFFECTS;

SILICON WAFERS;

EID: 79958124077     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.04.033     Document Type: Article

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