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Volumn 8, Issue 2, 2000, Pages 237-240

100 cm2 solar cells on Czochralski silicon with an efficiency of 20.2%

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHARGE CARRIERS; CONTAMINATION; DEFECTS; EFFICIENCY; OXYGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

EID: 0343090206     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(200003/04)8:2<237::AID-PIP309>3.0.CO;2-C     Document Type: Article
Times cited : (22)

References (6)
  • 4
    • 0033365078 scopus 로고    scopus 로고
    • Comparison of boron and gallium doped p-type czochralski silicon for photovoltaic application
    • Glunz SW, Rein S, Knobloch J, Wettling W, Abe T. Comparison of Boron and Gallium doped p-type Czochralski silicon for photovoltaic application. Progr. Photovolt., 7(6), 463-469 (1999).
    • (1999) Progr. Photovolt. , vol.7 , Issue.6 , pp. 463-469
    • Glunz, S.W.1    Rein, S.2    Knobloch, J.3    Wettling, W.4    Abe, T.5
  • 6
    • 0343366308 scopus 로고    scopus 로고
    • Degradation of carrier lifetime in Cz-Si solar cells
    • submitted to Solar Energy Materials and Solar Cells
    • Glunz SW, Rein S, Warta W, Knobloch J, Wettling W. Degradation of carrier lifetime in Cz-Si solar cells. Proceedings of PVSEC-II, submitted to Solar Energy Materials and Solar Cells.
    • Proceedings of PVSEC-II
    • Glunz, S.W.1    Rein, S.2    Warta, W.3    Knobloch, J.4    Wettling, W.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.