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Journal of Vacuum Science and Technology B

Volumn 29, Issue 3, 2011, Pages

Growth of AlGaN containing nanometer scale compositional inhomogeneities for ultraviolet light emitters

(6) Sampath, A V a Garrett, G A a Enck, R W a Rottella, P a Shen, H a Wraback, M a

a U S ARMY RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR ALLOYS;

ADATOM MOBILITIES; COMPOSITIONAL INHOMOGENEITY; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE INTENSITIES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SPONTANEOUS FORMATION; STOICHIOMETRIC GROWTH; ULTRAVIOLET LIGHT EMITTERS;

GALLIUM ALLOYS;

EID: 79958111909 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3585660 Document Type: Article

Times cited : (6)

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