Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 505-510

  Kapetanakis, E ^a   Normand, P ^a   Tsoukalas, D ^a   Beltsios, K ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

Charge storage; Implantation; Memory; Nanocrystals; Si; Single electron tunneling

Indexed keywords

ANNEALING; COULOMB BLOCKADE; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; GATES (TRANSISTOR); ION IMPLANTATION; MOS DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTING SILICON; SILICA; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

GATE OXIDES; SINGLE ELECTRON TUNNELING;

SEMICONDUCTOR STORAGE;

EID: 0036643921     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00483-5     Document Type: Conference Paper

References (10)