Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 95-100

  Lukasiak, L ^a   Roman, P ^b   Jakubowski, A ^a   Ruzyllo, J ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES;

SURFACE CHARGE PROFILING (SCP);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035157289     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00224-0     Document Type: Article

References (10)

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2. Brubaker M., Roman P., Staffa J., Ruzyllo J. Monitoring of chemical oxide removal from silicon surfaces using a surface photovoltage technique. Electrochem Solid-State Lett. 1:1998;130-132.
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9. Kamieniecki E. Surface photovoltage measured capacitance: application to semiconductor/electrolyte system. J Appl Phys 1983;54:6481-7.
10. Surface Charge Profiler SCP 7000, User's Manual, 2000, QC Solutions, Inc., North Billerica, MA.