MIM in 3D: Dream or reality?

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1507-1513

  Klootwijk, J H ^a   Jinesh, K B ^b   Roozeboom, F ^c,d  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d TNO   (Netherlands)

Author keywords

3D structures; Breakdown voltage; Capacitance density; High k; Rare earth materials

Indexed keywords

3D STRUCTURE; CAPACITANCE DENSITY; CAPACITOR STRUCTURES; CARRIER SUBSTRATE; DEPOSITION TECHNIQUE; DIELECTRIC LAYER; DIELECTRIC PERMITTIVITIES; HIGH ASPECT RATIO; HIGH-CAPACITANCE DENSITY; HIGH-K; HIGH-K DIELECTRIC LAYERS; IN-SITU; K DIELECTRICS; MACROPORE ARRAYS; RARE EARTH MATERIALS; SINGLE LAYER; STACK CAPACITORS;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; HAFNIUM OXIDES; POLYSILICON; RARE EARTHS; SEMICONDUCTING SILICON; TANTALUM; TANTALUM OXIDES;

THREE DIMENSIONAL;

EID: 79958032658     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.137     Document Type: Conference Paper

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