ALD options for Si-integrated ultrahigh-density decoupling capacitors in pore and trench designs

ECS Transactions

Volumn 3, Issue 15, 2006, Pages 173-181

  Roozeboom, F ^a   Klootwijk, J H ^b   Verhoeven, J F C ^b   Van Den Heuvel, F C ^b   Dekkers, W ^a   Heil, S B S ^c   Van Hemmen, J L ^c   Van De Sanden, M C M ^c   Kessels, W M M ^c   Cornec, F Le ^d   Guiraud, L ^d   Chevrie, D ^d   Bunel, C ^d   Murray, F ^d   Kim, H D ^e   Blin, D ^f  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d NXP SEMICONDUCTORS   (France)

^e Jusung Engineering Company Limited   (South Korea)

^f Jusung Engineering Europe   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMS; DIELECTRIC MATERIALS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; INTEGRATION; MINIATURE INSTRUMENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SYSTEM-IN-PACKAGE; TEMPERATURE; TITANIUM NITRIDE;

BACK-END PROCESSING; DECOUPLING CAPACITOR; ENABLING TECHNOLOGIES; FABRICATION TECHNOLOGIES; HETEROGENEOUS INTEGRATION; INTEGRATED PASSIVES; LAYER BY LAYER DEPOSITION; SELF LIMITING MECHANISM;

ATOMIC LAYER DEPOSITION;

EID: 45749099670     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2721486     Document Type: Conference Paper

References (14)

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