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Volumn 323, Issue 1, 2011, Pages 247-249
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Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(0 0 1)
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Author keywords
Crystal morphology; Molecular beam epitaxy; Nanostrucutres; Oxides; Silicon
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Indexed keywords
CRYSTAL MORPHOLOGIES;
CRYSTALLINE INSULATORS;
CRYSTALLINE OXIDES;
DEPOSITION TEMPERATURES;
EPITAXIAL RELATIONSHIPS;
GROWTH MECHANISMS;
HIGH DIELECTRIC CONSTANTS;
NANODOTS;
NANOSTRUCUTRES;
SI FILMS;
SI NANOCRYSTAL;
SI(0 0 1);
SI-SI BONDS;
VOLMER-WEBER MODES;
XPS;
BINDING ENERGY;
CRYSTALLINE MATERIALS;
EPITAXIAL GROWTH;
LANTHANUM ALLOYS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
NANOCRYSTALS;
SILICA;
SILICATES;
SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 79957993280
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.007 Document Type: Article |
Times cited : (10)
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References (13)
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