Structural and optical properties of N-doped β-Ga2O 3 films deposited by RF magnetron sputtering

Physica B: Condensed Matter

Volumn 406, Issue 15-16, 2011, Pages 3079-3082

  Zhang, Yijun ^a   Yan, Jinliang ^a   Li, Qingshan ^a   Qu, Chong ^a   Zhang, Liying ^a   Li, Ting ^a  

^a LUDONG UNIVERSITY   (China)

Author keywords

N doped Ga2O3; Optical band gap; Post annealed; RF magnetron sputtering; Transparent conductive oxide

Indexed keywords

N-DOPED; OPTICAL BANDS; POST-ANNEALED; RF-MAGNETRON SPUTTERING; TRANSPARENT CONDUCTIVE OXIDES;

AMMONIA; ENERGY GAP; GALLIUM; GALLIUM ALLOYS; MAGNETRON SPUTTERING; ORGANIC POLYMERS; PARTIAL PRESSURE; QUARTZ;

OPTICAL PROPERTIES;

EID: 79957975552     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.05.011     Document Type: Article

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