Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4854-4857

  Takakura, K ^a   Koga, D ^a   Ohyama, H ^a   Rafi, J M ^b   Kayamoto, Y ^c   Shibuya, M ^d   Yamamoto, H ^e   Vanhellemont, J ^f  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c Koto Manufacturing Co Ltd   (Japan)

^d Japan Gas Chemi   (Japan)

^e Techno Design Co Ltd   (Japan)

^f GHENT UNIVERSITY   (Belgium)

Author keywords

Gallium oxide; Optical absorption spectra; Transparent electrode

Indexed keywords

CRYSTALLINE QUALITY; DEPOSITED FILMS; GALLIUM OXIDES; MIXED PHASIS; NITROGEN AMBIENT; OPTICAL ABSORPTION COEFFICIENTS; OPTICAL ABSORPTION MEASUREMENT; OPTICAL ABSORPTION SPECTRUM; POLYCRYSTALLINE; QUARTZ SUBSTRATE; RF-MAGNETRON SPUTTERING; SI CONCENTRATION; SI SUBSTRATES; THERMAL-ANNEALING; TRANSPARENT ELECTRODE;

ABSORPTION; AMORPHOUS MATERIALS; GALLIUM; GALLIUM ALLOYS; LIGHT ABSORPTION; MAGNETRON SPUTTERING; OXIDE MINERALS; QUARTZ; SILICON; SUBSTRATES;

OPTICAL FILMS;

EID: 74349109210     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.167     Document Type: Article

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