Effect of mask material on selective growth of GaN by RF-MBE

Journal of Crystal Growth

Volumn 324, Issue 1, 2011, Pages 88-92

  Nagae, Yuki ^a   Iwatsuki, Takenori ^a   Shirai, Yuya ^a   Osawa, Yuki ^a   Naritsuka, Shigeya ^a   Maruyama, Takahiro ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

A1. Molecular beam epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconductor IIIV materials

Indexed keywords

A1. MOLECULAR BEAM EPITAXY; ADATOM MIGRATION; B1. GALLIUM COMPOUNDS; B1. NITRIDES; B2. SEMICONDUCTOR IIIV MATERIALS; DENUDED ZONES; GAN TEMPLATE; HIGH GROWTH TEMPERATURES; MASK MATERIALS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RADIO FREQUENCIES; SELECTIVE GROWTH; SMOOTH SURFACE; THRESHOLD TEMPERATURES;

ADATOMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SILICON COMPOUNDS;

SEMICONDUCTOR GROWTH;

EID: 79957846501     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.04.022     Document Type: Article

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