High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2506-2508

  Ju, Jin Woo ^a   Lee, Cheul Ro ^a   Baek, Jong Hyeob ^b   Lee, Young Hee ^c   Lee, In Hwan ^a  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c SYSNEX Co Ltd   (South Korea)

Author keywords

InGaN GaN; MOCVD; MQW

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; EPITAXIAL LAYERS; INGAN/GAN; MULTI-QUANTUM WELLS (MQW);

LIGHT EMITTING DIODES;

EID: 21244441006     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2506     Document Type: Conference Paper

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