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Journal of Crystal Growth

Volumn 324, Issue 1, 2011, Pages 98-102

Heteroepitaxy of SnO2 thin films on m-plane sapphire by MOCVD

(5) Zhu, Zhen a Ma, Jin a Kong, Lingyi a Luan, Caina a Yu, Qiaoqun a

a SHANDONG UNIVERSITY (China)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Oxides; B2. Semiconducting IIVI materials

Indexed keywords

A1. CHARACTERIZATION; B1. OXIDES; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; FILM ORIENTATIONS; HETEROEPITAXY; HIGH TRANSPARENCY; IN-PLANE RELATIONSHIP; M-PLANE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; PHOTOLUMINESCENCE SPECTRUM; PL BANDS; PL MECHANISM; ROOM TEMPERATURE; RUTILE STRUCTURE; SAPPHIRE SUBSTRATES; SEMICONDUCTING II-VI MATERIALS; SINGLE-CRYSTALLINE; TEMPERATURE RANGE; VISIBLE RANGE;

DIFFRACTION; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDE MINERALS; SAPPHIRE; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

VAPOR DEPOSITION;

EID: 79957830323 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.04.024 Document Type: Article

Times cited : (15)

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