Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces

Surface Science

Volumn 605, Issue 13-14, 2011, Pages 1308-1312

  Avasthi, Sushobhan ^a   Qi, Yabing ^a   Vertelov, Grigory K ^a,b   Schwartz, Jeffrey ^a,b   Kahn, Antoine ^a   Sturm, James C ^a  

^a Princeton University   (United States)

^b PRINCETON UNIVERSITY   (United States)

Author keywords

9,10 phenanthrenequinone; Heterojunction; Passivation; Silicon organic

Indexed keywords

9 ,10-PHENANTHRENEQUINONE; BAND ALIGNMENTS; BANDBENDING; LOW DENSITY; ORGANIC MOLECULES; P-TYPE SUBSTRATES; ROOM TEMPERATURE DEPOSITION; SILICON (100); SILICON SURFACES; SILICON-ORGANIC; SPECTROSCOPIC MEASUREMENTS; SURFACE DANGLING BONDS; WIDE BAND GAP;

ALIGNMENT; DANGLING BONDS; DEFECT DENSITY; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; PASSIVATION; SURFACE DEFECTS;

SEMICONDUCTING SILICON;

EID: 79957812016     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.04.024     Document Type: Article

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