Electrical properties of doped polypyrrole/silicon heterojunction diodes and their response to NOx gas

Thin Solid Films

Volumn 292, Issue 1-2, 1997, Pages 293-298

  Tuyen, Le T T ^a   Potje Kamloth, K ^b   Liess, H D ^b  

^a INSTITUTE OF MATERIALS SCIENCE   (Viet Nam)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Diodes; Nitrogen dioxide; Polymers; Sensors

Indexed keywords

ELECTRIC PROPERTIES; ELECTROLYTES; FABRICATION; HETEROJUNCTIONS; NITROGEN OXIDES; ORGANIC POLYMERS; POLYMERIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SENSORS; SOLUTIONS; SURFACE TREATMENT;

POLYPYRROLE; SODIUM TOLUENESULFONATE; TOLUENE SULFONIC ACID;

SEMICONDUCTOR DIODES;

EID: 0031553488     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08982-1     Document Type: Article

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