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Volumn 324, Issue 1, 2011, Pages 78-81
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Thermodynamic analysis of SiC polytype growth by physical vapor transport method
a
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Author keywords
A1. Computer simulation; A1. Heat transfer; A1. Substrate; A2. Growth from vapor
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Indexed keywords
A1. COMPUTER SIMULATION;
A1. HEAT TRANSFER;
A1. SUBSTRATE;
A2. GROWTH FROM VAPOR;
CLASSICAL THERMODYNAMICS;
FORMATION ENERGIES;
FREE-ENERGY DIFFERENCE;
GLOBAL MODELS;
HEAT TRANSPORT;
NUCLEATION STAGES;
NUCLEATION THEORY;
NUMERICAL MODELS;
NUMERICAL RESULTS;
PHYSICAL VAPOR TRANSPORT;
POLYTYPES;
PREFERENTIAL GROWTH;
SPECIES TRANSPORT;
SURFACE ENERGIES;
THERMO DYNAMIC ANALYSIS;
TOTAL PRESSURE;
COMPUTER SIMULATION;
FREE ENERGY;
HEAT TRANSFER;
NUCLEATION;
NUMERICAL METHODS;
SILICON CARBIDE;
SUPERSATURATION;
SURFACE CHEMISTRY;
THERMOANALYSIS;
VAPORS;
CRYSTAL GROWTH FROM VAPOR;
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EID: 79957798370
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.03.059 Document Type: Article |
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Times cited : (26)
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References (16)
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