Computational study on the SiC sublimation growth

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1196-1201

  Boottcher K ^a   Schulz, D ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Convection; A1. Diffusion; A1. Heat transfer; A1. Mass transfer; A2. Growth from vapor

Indexed keywords

COMPUTER SOFTWARE; DIFFUSION; FINITE ELEMENT METHOD; FREE ENERGY; HEAT CONVECTION; INTERFACES (MATERIALS); MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBLIMATION; THERMAL EFFECTS;

SUBLIMATION GROWTH;

CRYSTAL GROWTH;

EID: 0036530493     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02167-4     Document Type: Article

References (18)