A novel method to increase the growth rate in sublimation crystal growth of advanced materials

International Journal of Heat and Mass Transfer

Volumn 50, Issue 7-8, 2007, Pages 1221-1230

  Wang, Xiaolin ^a   Cai, Dang ^a   Zhang, Hui ^a  

^a Stony Brook University   (United States)

Author keywords

Crystal; Growth; Porosity; Powder; Rate; Sublimation

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTATIONAL GEOMETRY; COMPUTER SIMULATION; MATHEMATICAL MODELS; NUMERICAL METHODS; POROSITY;

POWDER POROSITY; SUBLIMATION GROWTH; TEMPERATURE DIFFERENCE;

CRYSTAL GROWTH;

ALUMINUM COMPOUNDS; COMPUTATIONAL GEOMETRY; COMPUTER SIMULATION; CRYSTAL GROWTH; MATHEMATICAL MODELS; NUMERICAL METHODS; POROSITY;

EID: 33846909247     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijheatmasstransfer.2006.09.021     Document Type: Article

References (18)

1. Tacitus C. The Histories and the Annals (1937), Harvard University Press, Cambridge p. 4 v
2. Rojo J.C., Schowalter L.J., Gaska R., Shur M., Khan M.A., Yang J., and Doleske D.D. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals. J. Cryst. Growth 240 (2002) 508-512
3. Bliss D.F., Tassev V.L., Weyburne D., and Bailey J.S. Aluminum nitride substrate growth by halide vapor transport epitaxy. J. Cryst. Growth 250 1 (2003) 1-6
4. Blasi C.D. Physico-chemical process occurring inside a degrading two-dimensional anisotropic porous medium. Int. J. Heat Mass Transfer 41 (1998) 4139-4150
5. Meng G.Y., Azema N., Cros B., Durand J., and Cot L. The growth mechanism of oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process. J. Cryst. Growth 129 3-4 (1993) 610-620
6. Rojo J.C., Slack G.A., Morgan K., Raghothamachar B., Dudley M., and Schowalter L.J. Report on the growth of bulk aluminum nitride and subsequent substrate preparation. J. Cryst. Growth 231 3 (2001) 317-321
7. Singh N.B., Berghmans A., Zhang H., Wait T., Clarke R.C., Zingaro J., and Golombeck J.C. Physical vapor transport growth of large AlN crystals. J. Cryst. Growth 250 1-2 (2003) 107-112
8. Schlesser R., and Sitar Z. Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere. J. Cryst. Growth 234 2-3 (2002) 349-353
9. Schlesser R., Dalmau R., and Sitar Z. Seeded growth of AlN bulk single crystals by sublimation. J. Cryst. Growth 241 4 (2002) 416-420
10. Wu B., and Zhang H. Transport phenomena in an aluminum nitride induction heating sublimation growth system. Int. J. Heat Mass Transfer 47 (2004) 2989-3001
11. Zhang H., Wu B., Cai D., Zheng L., Bliss D.F., and Tessav V.L. Group III nitride vapor growth systems: modeling and experiments. In: Karas G.V. (Ed). Focus on Crystal Growth Research (2005), Nova Science Pub Inc., New York 49-110
12. Ma R.-H., Zhang H., Prasad V., and Dudley M. Growth kinetics and thermal stress in the sublimation growth of silicon carbide. Cryst. Growth Des. 2 3 (2002) 213-220
13. Ma R.-H., Zhang H., Ha S., and Skowronski M. Integrated process modeling and experimental validation of silicon carbide sublimation growth. J. Cryst. Growth 252 (2003) 523-537
14. Modest M.F. Radiative Heat Transfer (1993), McGraw-Hill, New York
15. R.G. Gann, Jr.R.H. Harris, J.F. Krasny, R.S. Levine, H.E. Mitler, T.J. Ohlemiller, The effect of cigarette characteristics on the ignition of soft furnishings, 1988.
16. Chase M.W. NIST-JANAF Thermochemical Tables. J. Phys. Chem. Ref. Data Monograph 9. 4th ed. (1998), American Chemical Society and American Institute of Physics
17. Wu B., and Zhang H. Isotropic and anisotropic growth models for the sublimation vapour process. Model. Simulat. Mater. Sci. Eng. 13 (2005) 861-873
18. Personal communication with Drs. Z. Sitar and D.J. Zhuang in Department of Materials Science in North Carolina State University.