Analytical model of silicon carbide growth under free-molecular transport conditions

Journal of Crystal Growth

Volumn 169, Issue 3, 1996, Pages 491-495

  Karpov, S Yu ^a   Makarov, Yu N ^b   Ramm, M S ^c  

^a Advanced Technology Cent   (Russian Federation)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MATHEMATICAL MODELS; SUBLIMATION; VAPOR PHASE EPITAXY;

FREE MOLECULAR TRANSPORT; SILICON CARBIDE GROWTH; SILICON CARBIDE VAPOR PHASE; SUBLIMATION SANDWICH METHOD;

SILICON CARBIDE;

EID: 0030394025     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00416-2     Document Type: Article

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