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Applied Physics Letters

Volumn 98, Issue 20, 2011, Pages

Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

(5) Tripathi, A K a Smits, E C P a Loth, M b Anthony, J E b Gelinck, G H a

a HOLST CENTRE (Netherlands)

b UNIVERSITY OF KENTUCKY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; CHARGE TRANSPORT; COMPARATIVE ANALYSIS; DIELECTRIC CONSTANTS; DUAL GATES; GAUSSIAN DENSITY OF STATE; MOBILITY MEASUREMENTS; ORGANIC THIN FILM TRANSISTORS; POLARON HOPPING; POLYCRYSTALLINE; PROCESSABLE; TEMPERATURE DEPENDENT; THERMALLY ACTIVATED; TOP GATE;

DIELECTRIC MATERIALS; GATES (TRANSISTOR); ORGANIC FIELD EFFECT TRANSISTORS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

GATE DIELECTRICS;

EID: 79957564656 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3591969 Document Type: Article

Times cited : (16)

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