A macro model of programmable metallization cell devices

Solid-State Electronics

Volumn 49, Issue 11 SPEC. ISS., 2005, Pages 1813-1819

  Gilbert, Nad E ^a   Gopalan, Chakravarthy ^b   Kozicki, Michael N ^b  

^a Desert Microtechnology Associates Inc   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Macro model; Non volatile memory; Programmable metallization cell; Solid electrolyte

Indexed keywords

EQUIVALENT CIRCUITS;

MACRO MODEL; NON-VOLATILE MEMORY; PROGRAMMABLE METALLIZATION CELLS;

SOLID ELECTROLYTES;

EID: 28144433129     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.019     Document Type: Conference Paper

References (6)

1. Kozicki MN, Gopalan C, Balakrishnan M, Park M, Mitkova M. Non-volatile memory based on solid electrolytes. In: Proceedings of the 2004 non-volatile memory technology symposium, 2004. p. 10-7.
2. M.N. Kozicki, M. Park, and M. Mitkova Nanoscale memory elements based on solid state electrolytes IEEE Trans Nanotechnol 4 3 2005 331 338
3. M. Mitkova, M.N. Kozicki, H. Kim, and T. Alford Local structure resulting from photo- and thermal diffusion of Ag in Ge-Se thin films J Non-Cryst Solids 338-340C 2004 552 556
4. M. Mitkova, M.N. Kozicki, H.C. Kim, and T.L. Alford Thermal and photodiffusion of Ag in S-rich Ge-S amorphous films Thin Solid Films 449 2004 248 253
5. 0.40/Ag system prepared by photodissolution of Ag J Electrochem Soc 145 1998 2971 2974
6. Swaroop B, West WC, Martinez G, Kozicki MN, Akers LA. Programmable current mode Hebbian learning neural network using programmable metallization cell. In: Proceedings of the international symposium on circuits and systems, vol. 3, 1998. p. 33-6.