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Volumn 3, Issue 2, 2011, Pages 107-113

High-performance 60 GHz MMICs for wireless digital communication in 100 nm mHEMT technology

Author keywords

60 GHz; Circuit design and applications; Low noise and communication receivers

Indexed keywords

60 GHZ; ANALOG FRONT-END; BUILDING BLOCKES; CIRCUIT DESIGNS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; CONSUMER MARKET; CONVERSION GAIN; III-V COMPOUND SEMICONDUCTOR; INTEGRATED ANTENNAS; LOCAL OSCILLATORS; LOW COMPLEXITY; LOW NOISE; MEDIUM POWER AMPLIFIER; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; PERFORMANCE REQUIREMENTS; SATURATED OUTPUT POWER; SINGLE CHIPS; SINGLE-CHIP; SINGLE-CHIP TRANSCEIVERS; SUBHARMONICS; TRANSMITTER POWER; UP-CONVERTER; WIRELESS DATA COMMUNICATION; WIRELESS DIGITAL COMMUNICATIONS;

EID: 79956087476     PISSN: 17590787     EISSN: 17590795     Source Type: Journal    
DOI: 10.1017/S1759078711000109     Document Type: Article
Times cited : (5)

References (12)
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  • 2
    • 48149083827 scopus 로고    scopus 로고
    • Wideband millimeter wave PIN diode SPDT switch using IBM 0.13 mm SiGe technology
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    • Kwanhim, L.1
  • 3
    • 51849161821 scopus 로고    scopus 로고
    • An ultra low power LNA with 15 dB gain and 4.4 dB NF in 90 nm CMOS process for 60 GHz phase array radio
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    • Cohen, E.; Ravid, S.; Ritter, D.: An ultra low power LNA with 15 dB gain and 4.4 dB NF in 90 nm CMOS process for 60 GHz phase array radio, in Radio Frequency Integrated Circuits Symp., 2008. RFIC 2008. IEEE, June 17, 2008-April 17 2008, 61-64.
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  • 5
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    • A low-loss 50-70 GHz SPDT switch in 90 nm CMOS
    • Uzunkol, M.; Rebeiz, G.M.: A low-loss 50-70 GHz SPDT switch in 90 nm CMOS. IEEE J. Solid-State Circuits, 45 (10) (2010), 2003- 2007.
    • (2010) IEEE J. Solid-State Circuits , vol.45 , Issue.10 , pp. 2003-2007
    • Uzunkol, M.1    Rebeiz, G.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.