50 nm MHEMT technology for G- and H-band MMICs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 24-27

  Leuther, Arnulf ^a   Tessmann, Axel ^a   Dammann, Michael ^a   Schwörer, Christoph ^a   Schlechtweg, Michael ^a   Mikulla, Michael ^a   Lösch, Rainer ^a   Weimann, Günter ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LOW NOISE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON CONFINEMENT; GATE WIDTH DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748851876     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.380680     Document Type: Conference Paper

References (8)

1. L. Samoska, MTTS 2006, p. 333, 2006
2. A. Tessmann, IEEE Journal of Solid-State Circuits, vol. 40, No. 10, p, 2070, 2005
3. Y. Yamashita, A. Endoh, K. Shinohara, K. Hikosaka, T. Matsui, s. Hiyamizu, T, Mimura, IEEE Electron Device Letters, p.573, vol. 23. no. 10, 2002
4. W. R. Deal, M. Biedenbender, P. H. Liu, C. Namba, S. Chen, M. Sergant, J. Uyeda, M. Siddiqui, R. Lai, B. Allen, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, San Antonio, TX, USA, 2006
5. W. H. Haydl, Transactions on Microwave Theory and Techniques, IEEE, Volume 50, Issue 6, p. 1571, 2002
6. M. Dammann, A. Leuther, H, Konstanzer, W. Jantz, GaAs Reliability Workshop, p. 87, 2001
7. Y. C. Chou, R. Lai, D. Leung, Q. Kan, D. Farkas, D. Eng, M. Wojtowicz, P. Chin, T. Block, A. Oki, IPRM 2006, p. 188, 2006
8. C. Schwörer, Y. Campus Roca, A. Leuther, A. Tessmann, M. Seelmann-Eggebert, H. Massler, M. Schlechtweg, G. Weimann, 13th GaAs Symposium, p.565, 2005