Metamorphic MMICs for operation beyond 200 GHz

2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Volumn , Issue , 2008, Pages 210-213

  Tessmann, A ^a   Kallfass, I ^a   Leuther, A ^a   Massler, H ^a   Schlechtweg, M ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPLANAR CIRCUIT; GATE FIELD; GATE LENGTH; HIGH-RESOLUTION IMAGING; INALAS/INGAAS; LINEAR GAIN; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; SMALL-SIGNAL GAIN; SUB-HARMONICALLY PUMPED;

AUDIO FREQUENCY AMPLIFIERS; ELECTRIC NETWORK TOPOLOGY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; SUBMILLIMETER WAVES;

INTEGRATED CIRCUITS;

EID: 66649133830     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2008.4772266     Document Type: Conference Paper

References (7)

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