Acceptor impurities in Silicon carbide: Electron paramagnetic resonance and optically detected magnetic resonance studies

Defect and Diffusion Forum

Volumn 148-149, Issue , 1997, Pages 129-160

  Baranov, P G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Acceptors; Defects; Electron Paramagnetic Resonance; Optically Detected Magnetic Resonance; Silicon Carbide

Indexed keywords

EID: 18144444695     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.148-149.129     Document Type: Article

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