Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Applied Physics Letters

Volumn 80, Issue 5, 2002, Pages 755-757

  Vehse, M ^a   Michler, P ^a   Gosling I ^a   Rowe M ^a   Gutowski, J ^a   Bader, S ^b   Lell, A ^b   Bruderl G ^b   Harle V ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION PROCESS; ACTIVE LAYER; BARRIER HEIGHTS; CARRIER RECOMBINATION; EXCITATION DENSITY; GAN-BASED LASERS; LASER STRUCTURES; LASER THRESHOLD; LOCALIZED CARRIERS; NON-RADIATIVE RECOMBINATION CHANNELS; NON-RADIATIVE RECOMBINATIONS; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THERMAL ACTIVATION; THERMAL ACTIVATION ENERGIES; THERMAL EMISSION OF CARRIERS; THRESHOLD DENSITY; WELL WIDTH;

GALLIUM NITRIDE;

ACTIVATION ENERGY;

EID: 79956044157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1434305     Document Type: Article

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