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Volumn 77, Issue 23, 2000, Pages 3779-3781
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Gap state formation during the initial oxidation of Si(100)-2×1
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0001130764
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1330222 Document Type: Article |
Times cited : (7)
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References (15)
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