Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1841-1843

  Wernersson, L E ^a   Borgstrom M ^a   Gustafson, B ^a   Gustafsson, A ^a   Pietzonka, I ^a   Pistol, M E ^a   Sass, T ^a   Seifert, W ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; CRITICAL THICKNESS; DOUBLE BARRIERS; ELECTRICAL PERFORMANCE; GAAS; METAL-ORGANIC; PEAK-TO-VALLEY RATIOS; VAPOR PHASE;

DIODES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; RESONANT TUNNELING; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

RESONANT TUNNELING DIODES;

EID: 79956000886     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459113     Document Type: Article

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