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Volumn 170, Issue 1-4, 1997, Pages 127-131
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MOVPE growth of InP/GaInAs and GaAs/GaInP heterostructures for electronic transport applications
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
TUNNEL DIODES;
HETEROEPITAXIAL GROWTH;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030709890
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00519-2 Document Type: Article |
Times cited : (7)
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References (16)
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