Narrow-channel GaInP/InGaAs/GaAs MODFET's for high-frequency and power applications

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1341-1348

  Pereiaslavets, Boris ^a,b,c,d   Martin, Glenn H ^a,b,c,d   Eastman, Lester F ^a,b   Yanka, Robert W ^a,c,d   Ballingall, James M ^b,c,d   Braunstein, Jürgen ^c,d   Bachem, Karl H ^a,d   Ridley, Brian K ^a,b,c,d  

^a Cornell University   (United States)

^b Microelectronics Center   (United States)

^c NOVELLUS SYSTEMS INC   (United States)

^d FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

NARROW CHANNEL ELECTRON DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 0031234007     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622583     Document Type: Article

References (17)

1. B. Pereiaslavets, K. Bachem, J. Braunstein, and L.F. Eastman, "GaInP/InGaAs MODFET's on GaAs grown by OMVPE for high-frequency and power applications," in Proc. Int. Semiconductor Device Research Symp., Charlottesville, VA, 1995, pp. 247-250.
2. T > 100 GHz," Compound Semiconductors '95, Inst. Phys. Conf., 1995, ISCS, Seoul, Korea, ser. no. 145, ch. 5, pp. 829-834.
3. _, "GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: Design, fabrication, and device results," IEEE Trans. Electron Devices, Special Issue, "Present and future trends in device science and technology," vol. 43, pp. 1659-1664, Oct. 1996.
4. K.H. Bachem, W. Pletschen, M. Maier, I. Wiegert, K. Winkler, B. Pereiaslavets, L.F. Eastman, H. Tobler, I. Dickmann, and P. Norozny, "GaInP/GaInAs/GaAs structures for high-performance MODFETs: Design, growth procedures, hall data, and device properties," in 15th Biennial IEEE/Cornell Conf. Advanced Concepts High-Speed Semiconductor Devices and Circuits, 1995, pp. 20-25.
5. L. Eastman and G. Martin, "Simple analytical designs for graded channel SMODFET on GaAs and InP," Advanced Heterostructure Workshop, Kamuela, III, Dec. 4-9, 1994.
6. G.H. Martin, M. Seaford, R. Spencer, J. Braunstein, and L. F. Eastman, "Optimization of 3D-SMODFET's on GaAs and InP substrates with a simple analytical model," in 15th Biennial IEEE/Cornell Conf. Advanced Concepts High-Speed Semiconductor Devices and Circuits, Aug. 1995, pp. 132-140.
7. L.D. Nguyen, "Realization of ultra-high-speed field effect transistors," Ph.D. dissertation, Cornell Univ., Ithaca, NY, 1989.
8. M.C. Foisy, "A physical model for the bias dependence of the modulation-doped field effect transistor's high-frequency performance," Ph.D. dissertation, Cornell Univ., Ithaca, NY, 1990.
9. E.D. Jones, S. K. Lyo, J. F. Klem, J. E. Schirber, and C. P. Tigges, "Simultaneous measurements of the conduction and valence-band masses in strained-layer structures," Gallium Arsenide and Related Compounds, pp. 243-247, 1988.
10. E.D. Jones, J. F. Klem, and S. K. Lyo, "Magneto-optical studies of compound semiconductors," J. Phys. Chem. Solids, vol. 56, no. 11, pp. 1525-1528, 1995.
11. B.K. Ridley, "Remote impurity scattering in AlInAs/GaInAs FET's," Semicond. Sci. Technol., no. 11, pp. 1339-1345, 1996.
12. B. Pereiaslavets, J. Braunstein, G. Martin, L.F. Eastman, R. W. Yanka, and J. M. Ballingall, "Narrow-channel GaInP/InGaAs/GaAs MODFET grown by MBE with record 2-DEG density for high-frequency and power applications," in 54th Ann. Dev. Res. Conf. Dig., 1996, pp. 128-129.
13. D.C. Look, B. Jogai, C. E. Stutz, R. E. Sherriff, G. C. DeSalvo, T. J. Rogers, and J. M. Ballingall, "Magneto-hall characterization of delta-doped pseudomorphic high electron mobility transistor structures," J. Appl. Phys., Vol. 76, no. 1, 1994.
14. E.M. Conwell and V. F. Weisskopf, "Theory of impurity scattering in semiconductors," Phys. Rev., no. 77, pp. 388-390, 1950.
15. B.K. Ridley, Electrons and Phonons in Semiconductor Multilayers. Cambridge, MA: Cambridge Univ. Press, 1997.
16. S.M. Baier, M. S. Shur, K. L. Lee, N. C. Cirillo, and S. A. Hanka, "FET characterization using Gated-TLM structure," IEEE Trans. Electron Devices, vol. ED-32, pp. 2824-2829, Dec. 1985.
17. H. Morkoç, H. Unlu, and G. Ji, Principles and Technology of MODFET's. New York: Wiley, 1991.