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Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 763-765

Point-defect influence on 1/f noise in HgCdTe photodiodes

(3) Mainzer, N a Lakin, E b Zolotoyabko, E b

a SCD Semiconductor Devices Ltd (Israel)

b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; FOURIER TRANSFORM INFRARED; HALL MEASUREMENTS; HGCDTE; HGCDTE PHOTODIODES; HIGH RESOLUTION X RAY DIFFRACTION; LINEAR DEPENDENCE; PRECISE MEASUREMENTS; THEORETICAL MODELS;

DEFECTS; PHOTODIODES; X RAY DIFFRACTION;

MERCURY COMPOUNDS;

EID: 79955990915 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1494118 Document Type: Article

Times cited : (10)

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