Interrelations between defects in the Hg1-xCdxTe epilayers and their measured lattice parameters and composition

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 850-853

  Mainzer, N ^a,b   Lakin, E ^a   Bahir, G ^a   Zolotoyabko, E ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b SCD Semiconductor Devices Ltd   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LATTICE CONSTANTS; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

BOND METHOD; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0032683549     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0082-2     Document Type: Article

References (22)

1. W. Tennant, C.A. Cockrum, J.B. Gilpin, M.A. Kinch, M.B. Reine and R.P. Ruth, J. Vac. Sci. Technol. B 10, 1359 (1992).
2. H.R. Vydyanath, J. Electron. Mater. 24, 1275 (1995).
3. R. Balcerak and L. Brown, J.Vac.Sci.Technol.B 10,1353 (1992).
4. D.R. Rhiger, S. Sen, J.M. Peterson, H. Chung and M. Dudley J. Electron. Mater. 26, 515 (1997).
5. D. Rhiger, J.M. Peterson, R.M. Emerson, E.E. Gordon, S. Sen, Y. Chen and M. Dudley, J. Electron. Mater. 27, 615 (1998).
6. Heteroepitaxy and Strain, MRS Bulletin, 21, No. 4, (1996).
7. S.P. Tobin, F.T.J. Smith, P.W.Norton, J. Wu, M. Dudley, D. diMarzio and L.G. Casagrande, J. Electron. Mater. 24, 1189 (1995).
8. M.A. Berding, M. van Schilfgaarde and A. Sher, J. Vac. Sci. Technol. B 10, 1471 (1992).
9. M.A. Berding, M. van Schilfgaarde and A. Sher, Phys. Rev. B 50, 1519 (1994).
10. R.O. Simmons and R.W. Balluffi, Phys. Rev. 125, 862 (1962).
11. M. Lyakas, D. Parnis, W.D. Kaplan, E. Zolotoyabko, M. Eizenberg, V. Demuth and H.P. Strunk, Appl. Phys. Lett. 70, 1287 (1997).
12. W.L. Bond, Acta Cryst. 13, 814 (1960).
13. N. Mainzer, E. Zolotoyabko, A. Berner, E. Lakin, G. Bahir and A. Sher, J. Cryst. Growth 197, 542 (1999).
14. V. Ariel, V. Garber, D. Rosenfeld and G. Bahir, Appl. Phys. Lett. 66, 2101 (1995).
15. R.A. Carlson, R.J. Hager and R.A. Wood, J. Vac. Sci. Technol. A 5, 3048 (1987).
16. T. Skauli, T. Colin and S. Lovold, J. Cryst. Growth 172, 97 (1997).
17. P. Capper, Properties of Narrow-Gap Cadmium-Based Compounds, ed. P. Capper (London: IMSPEC, the Institute of Electrical Engineers, 1994), A2. 2.
18. J. Kang and T. Ogawa. J. Mater. Res. 13, 2100 (1998).
19. I. Sugiyama, N. Kajihara and Y. Miyamoto, J. Electron. Mater. 26, 616 (1997).
20. B. Pelliciari, G.L. Destefanis and L. diCioccio, J. Vac. Sci. Technol. A 7, 314 (1989).
21. S. Borello and Z. Selik-Butler, Solid State Electron. 36, 407 (1992).
22. R. Schiebel, D. Bartholomew, N. Bevan, R.S. List and M. Ohlson, J. Electron. Mater. 24, 1299 (1995).