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Volumn 197, Issue 3, 1999, Pages 542-546

Influence of structural defects on lattice parameter and measured composition of Hg1-xCdxTe epilayers

Author keywords

Defects; HgCdTe; X ray diffraction

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ENERGY DISPERSIVE SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LATTICE CONSTANTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

EID: 0033514141     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00748-9     Document Type: Article
Times cited : (9)

References (17)
  • 10
    • 0345028086 scopus 로고
    • P. Capper (Ed.), IMSPEC, the Institute of Electrical Engineers, London
    • P. Capper, in: P. Capper (Ed.), Properties of Narrow-Gap Cadmium-Based Compounds, IMSPEC, the Institute of Electrical Engineers, London, 1994, p. A2.2.
    • (1994) Properties of Narrow-gap Cadmium-based Compounds
    • Capper, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.