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Volumn 197, Issue 3, 1999, Pages 542-546
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Influence of structural defects on lattice parameter and measured composition of Hg1-xCdxTe epilayers
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Author keywords
Defects; HgCdTe; X ray diffraction
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL ORIENTATION;
ENERGY DISPERSIVE SPECTROSCOPY;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
LATTICE CONSTANTS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING CADMIUM TELLURIDE;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
VAPOR DEPOSITION;
X RAY DIFFRACTION ANALYSIS;
BOND METHOD;
HIGH RESOLUTION SCANNING ELECTRON MICROSCOPY;
HIGH RESOLUTION X RAY DIFFRACTION;
SEMICONDUCTING FILMS;
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EID: 0033514141
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00748-9 Document Type: Article |
Times cited : (9)
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References (17)
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