Local stresses induced by nanoscale As-Sb clusters in GaAs matrix

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 377-379

  Chaldyshev, V V ^a   Bert, N A ^a   Romanov, A E ^a   Suvorova, A A ^a   Kolesnikova, A L ^b   Preobrazhenskii, V V ^c   Putyato, M A ^c   Semyagin, B R ^c   Werner, P ^d   Zakharov, N D ^d   Claverie, A ^e  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^e CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DELTA-DOPED; DISLOCATION LOOP; GAAS; GAAS FILMS; LOCAL DEFORMATIONS; LOCAL STRAINS; LOCAL STRESS; LOW TEMPERATURES; MATRIX; NANO SCALE; ORIENTATION RELATIONSHIP; SURROUNDING MATRIX;

ARSENIC; MICROSTRUCTURE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ARSENIDE;

EID: 79955982456     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1426691     Document Type: Article

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