Chemical-mechanical polishing of SiCOH-based low-k dielectrics

ECS Transactions

Volumn 2, Issue 1, 2006, Pages 227-236

  Tseng, Wei Tsu ^d   Sakamoto, Akihisa ^a   Ponoth, Shorn ^d   Hong, Duk Ho ^b   Economikos, Laertis ^d   Vogt, Stephen ^d   Ticknor, Adam ^d   Cohen, Steve ^d   Krishnan, Mahadevaiyer ^c   Wanner, Robin ^d   Kim, Ben ^d  

^a SONY CORPORATION   (Japan)

^b SAMSUNG Electronics   (South Korea)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVES; DEPOSITION; ELECTROCHEMISTRY; LEAKAGE CURRENTS; POROSITY; POROUS MATERIALS;

BREAKDOWN STRENGTH; CHEMICAL-MECHANICAL POLISHING; RESISTANCE DISTRIBUTION;

DIELECTRIC MATERIALS;

EID: 33745470101     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. W.-T. Tseng et al., in Chemical-mechanicalplanarization/2002, S. V. Babu, R. Singh, N. Hasayaka, M. Oliver, Editors, 732E, I1.7.1, Mat. Res. Soc. Symp. Proc., Pittsburg, PA (2002).
4. Y. Z. Hu et al., J. Electrochem. Soc., 145, 3919 (1998).
5. W. Choi, S.-M. Lee, R. K. Singh, in Chemical-mechanical planarization/2003, D. S. Boning, K. Devriendt, M. R. Oliver, D. J. Stein, I. Voss, Editors, 767, F1.10.1, Mat. Res. Soc. Symp. Proc., Pittsburg, PA (2003).
6. th International CMP for ULSI Multilevel Interconnection Conference (CMP-MIC 2005), Rich Baker et al., Editors, p. 567, Proceedings of CMP-MIC 2005, FL (2005).