Novel barrier dielectric liner prepared by liquid-phase deposition and NH3-plasma annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 A, 2000, Pages 6672-6675

  Yeh, Ching Fa ^a   Lee, Yueh Chuan ^a   Chen, Chi Ming ^a   Wu, Kwo Hau ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Barrier dielectric; Conformal deposition; Liner; Liquid phase deposition; NH3 plasma annealing

Indexed keywords

ANNEALING; DEPOSITION; PLASMA APPLICATIONS; SYNTHESIS (CHEMICAL);

LIQUID PHASE DEPOSITION; PLASMA ANNEALING;

DIELECTRIC MATERIALS;

EID: 0034470785     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6672     Document Type: Article

References (17)

1. E. M. Zielinski, S. W. Russell, R. S. List, A. M. Wilson, C. Jin, K. J. Newton, J. P. Lu, T. Hurd, W. Y. Hsu, V. Cordasco, M. Gopikanth, V. Korthuis, W. Lee, G. Cerny, N. M. Russel, P. B. Smith, S. O'Brien and R. H. Havemann: Tech. Dig. IEEE Int. Electron Devices Meet. (1997) p. 936.
2. S. U. Kim, T. Cho and P. Ho: Ext. Abstr. 1998 Int. Conf. Solid State Devices and Materials (1998) p. 268.
3. C. F. Yeh, Y. C. Lee and S. C. Lee: Mater. Res. Soc. Symp. Proc. 511 (1998) 57.
4. C. F. Yeh, Y. C. Lee, K. H. Wu, Y. C. Su and S. C. Lee: J. Electrochem. Soc. 147 (2000) 330.
5. Y. Sakai, T. Goda, A. Hishinuma and H. Kawahara: Proc. Int. Ceramics Conf. (AUSTCERAM 90), 1990, p. 474.
6. A. L. S. Loke, C. Ryu, C. P. Yue, J. S. H. Cho and S. S. Wong: IEEE Electron Device Lett. 17 (1996) 549.
7. G. Raghavan, C. Chiang, P. B. Anders, S. M. Tzeng, R. Villasol, G. Bai, M. Bohr and D. B. Fraser: Thin Solid Films 262 (1995) 168.
8. H. Miyazaki, K. Hinode, Y. Homma and N. Kobayashi: Jpn. J. Appl. Phys. 35 (1996) 1685.
9. T. Homma, T. Katoh, Y. Yamada and Y. Murao: J. Electrochem. Soc. 140 (1993) 2410.
10. W. W. Lee, M. Jain, K. Taylor, C. Jin, A. Singh, J. D. Luttmer and B. Havemann: Advanced Metallization for ULSI Application in 1997 (Materials Research Society, 1997) p. 367.
11. I. Goswami and M. J. Loboda: Proc. 14th VLSI Multilevel Interconnection Conf. (1997) p. 632.
12. C. F. Yeh, Y. C. Lee and S. C. Lee: Proc. 15th VLSI Multilevel Interconnection Conf. (1998) p. 598.
13. C. F. Yeh, D. C. Chen, C. Y. Lu, C. Liu, S. T. Lee, C. H. Liu and T. J. Chen: Tech. Dig. IEEE Int. Electron Devices Meet. (1998) p. 269.
14. L. C. Lane, T. C. Nason, G. R. Yang, T. M. Lu and H. Bakhru: J. Appl. Phys. 69 (1991) 6719.
15. N. Awaya, H. Inokawa, E. Yamamoto, Y. Okazaki, M. Miyake, Y. Arita and T. Kobayashi: IEEE Trans. Electron Devices 43 (1996) 1206.
16. Z. H. Lu, S. P. Tay, R. Cao and P. Pianetta: Appl. Phys. Lett. 67 (1995) 2836.
17. K. Mikagi, H. Ishikawa, T. Usami, M. Suzuki, K. Inoue, N. Oda, S. Chikaki, I. Sakai and T. Kikkawa: Tech. Dig. IEEE Int. Electron Devices Meet. (1996) 365.