Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7945, Issue , 2011, Pages

  Nguyen, Binh Minh ^a   Chen, Guanxi ^a   Hoang, Minh Anh ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

InAs GaSb; LWIR; M structure; Molecular beam epitaxy; Type II superlattice; uniformity

Indexed keywords

INAS/GASB; LWIR; M-STRUCTURE; TYPE II SUPERLATTICE; UNIFORMITY;

ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; GALLIUM ALLOYS; GROWTH (MATERIALS); INDIUM ANTIMONIDES; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOPHOTONICS; PHOTODIODES; SUPERLATTICES;

QUANTUM EFFICIENCY;

EID: 79955752331     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879860     Document Type: Conference Paper

References (12)

1. M. Razeghi, US Patent 6864552, Focal Plane Arrays in Type-II Superlattices, 2005
2. B.-M. Nguyen, D. Hoffman, Y. Wei, P.-Y. Delaunay, A. Hood, and M. Razeghi, "Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 mu m," Applied Physics Letters, 90(23), 231108-3 (2007).
3. B.-M. Nguyen, D. Hoffman, P.-Y. Delaunay, E. K.-W. Huang, M. Razeghi, and J. Pellegrino, "Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes," Applied Physics Letters, 93(16), 163502-3 (2008).
4. B.-M. Nguyen, D. Hoffman, E. K.-w. Huang, P.-Y. Delaunay, and M. Razeghi, "Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K," Applied Physics Letters, 93(12), 123502-3 (2008).
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6. E. K.-w. Huang, D. Hoffman, B.-M. Nguyen, P.-Y. Delaunay, and M. Razeghi, "Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes," Applied Physics Letters, 94(5), 053506-3 (2009).
7. P. Y. Delaunay, B.-M. Nguyen, D. Hoffman, E. K. W. Huang, and M. Razeghi, "Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From MStructure InAsGaSb Superlattices," Quantum Electronics, IEEE Journal of, 45(2), 157-162 (2009).
8. W. Tennant, ""Rule 07" Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?," Journal of Electronic Materials, 39(7), 1030-1035 (2010).
9. M. Razeghi, B.-M. Nguyen, P.-Y. Delaunay, E. K.-w. Huang, S. A. Pour, P. Manukar, and S. Bogdanov, "State-of-the-art Type II Antimonide-based superlattice photodiodes for infrared detection and imaging," Proceeding of Nanophotonics and Macrophotonics for Space Environments III. 7467, 74670T-13 (2009).
10. A. Hood, P.-Y. Delaunay, D. Hoffman, B.-M. Nguyen, Y. Wei, M. Razeghi, and V. Nathan, "Near bulk-limited R [sub 0]A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation," Applied Physics Letters, 90(23), 233513-3 (2007).
11. B.-M. Nguyen, D. Hoffman, P.-Y. Delaunay, M. Razeghi, and V. Nathan, "Polarity inversion of type II InAs/GaSb superlattice photodiodes," Applied Physics Letters, 91(10), 103503-3 (2007).
12. B.-M. Nguyen, D. Hoffman, P.-Y. Delaunay, and M. Razeghi, "Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier," Applied Physics Letters, 91(16), 163511-3 (2007).