"Rule 07"' revisited: Still a good heuristic predictor of p/n HgCdTe photodiode performance?

Journal of Electronic Materials

Volumn 39, Issue 7, 2010, Pages 1030-1035

  Tennant, W E ^a  

^a TELEDYNE SCIENTIFIC COMPANY   (United States)

Author keywords

Auger; Focal plane array; HgCdTe; High operating temperature; Infrared detector; IR; MBE; NBn; SLS; Strained layer superlattice; Type II superlattice

Indexed keywords

HGCDTE; HIGH OPERATING TEMPERATURE; MBE; STRAINED-LAYER SUPERLATTICE; TYPE-II SUPERLATTICES;

AUGERS; CRYSTAL GROWTH; CURRENT DENSITY; DARK CURRENTS; DETECTORS; INFRARED DETECTORS; INFRARED RADIATION; PHOTODIODES; SUPERLATTICES; TEMPERATURE;

MERCURY COMPOUNDS;

EID: 77954623535     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1084-9     Document Type: Conference Paper

References (16)

1. W.E. Tennant, D. Lee, M. Zandian, E. Piquette, and M. Carmody, J. Electron. Mater. 37, 1406 (2008).
2. S.E. Schacham and E. Finkman, J. Appl. Phys. 57, 2001 (1985).
3. J. Bajaj, J.M. Arias, M. Zandian, D.D. Edwall, J.G. Pasko, L.O. Bubulac, and L.J. Kozlowski, J. Electron. Mater. 25, 1394 (1996).
4. J.M. Arias, J.G. Pasko, M. Zandian, J. Bajaj, L.J. Kozlowski, R.E. DeWames, and W.E. Tennant, Proc. SPIE Symp. Producibility II-VI Mater. Dev. 2228, 210 (1994).
5. G.M. Williams and R.E. DeWames, J. Electron. Mater. 24, 1239 (1995).
6. T. Ashley, C.T. Elliot, N.T. Gordon, T.J. Phillips, and R.S. Hall, Infrared Phys. Technol. 38, 145 (1997).
7. J.R. Lindle, W.W. Bewley, I. Vurgaftman, J.R. Meyer, M.L. Thomas, E.C. Piquette, D.D. Edwall, and W.E. Tennant, Appl. Phys. Lett. 90, 241119 (2007).
8. C.H. Grein, J. Garland, and M.E. Flatte, J. Electron. Mater. 38, 1800 (2009).
9. W.E. Tennant, E.C. Piquette, D.L. Lee, M.L. Thomas, and M. Zandian, US Patent 736,8762 (2008).
10. M.A. Kinch, Fundamentals of Infrared Detector Materials (Bellingham: SPIE, 2007), pp 97-98.
11. S. Maimon and G.W. Wicks, Appl. Phys. Lett. 89, 151109 (2006).
12. G. Bishop, E. Plis, J.B. Rodriguez, Y.D. Sharma, H.S. Kim, L.R. Dawson, and S. Krishna, J. Vac. Sci. Technol. B 26, 1145 (2008).
13. I. Vurgaftman, E.H. Aifer, C.L. Canedy, J.G. Tischler, J.R. Meyer, J.H. Warner, E.M. Jackson, G. Hildebrandt, and G.L. Sullivan, Appl. Phys. Lett. 89, 121114 (2006).
14. M. Razeghi, D. Hoffman, B. Nguyen, P. Delaunay, E.K. Huang, M.Z. Tidrow, and V. Nathan, Proc. IEEE 97, 1056 (2009).
15. D.Z.-Y. Ting, C.J. Hill, A. Soibel, S.A. Keo, J.M. Murnolo, J. Nguyen, and S.D. Gunapala, Appl. Phys. Lett. 95, 023508 (2009).
16. A.D. Hood, A.J. Evans, A. Ikhlassi, D.L. Lee, and W.E. Tennant, J. Electron. Mater. (to be published).