메뉴 건너뛰기




Volumn 3, Issue 3, 2010, Pages 321-327

Investigation of Al Schottky junction on n-type CdS film deposited on polymer substrate

Author keywords

Al n CdS thin film; polymer substrate; Schottky barrier junction; thermal evaporation method

Indexed keywords


EID: 79955750343     PISSN: 16744128     EISSN: 16744594     Source Type: Journal    
DOI: 10.1007/s12200-010-0102-0     Document Type: Article
Times cited : (14)

References (30)
  • 1
    • 0009695085 scopus 로고
    • Vapor-deposited thin film piezoelectric transducers
    • DeKlerk J, Kelly R F. Vapor-deposited thin film piezoelectric transducers. Review of Scientific Instruments, 1965, 36(4): 506-510.
    • (1965) Review of Scientific Instruments , vol.36 , Issue.4 , pp. 506-510
    • DeKlerk, J.1    Kelly, R.F.2
  • 2
    • 0346423584 scopus 로고
    • Electroluminescence in vacuum evaporated cadmium sulfide
    • Andrews A M, Haden C R. Electroluminescence in vacuum evaporated cadmium sulfide. Proceedings of the IEEE, 1969, 57(1): 99-100.
    • (1969) Proceedings of the IEEE , vol.57 , Issue.1 , pp. 99-100
    • Andrews, A.M.1    Haden, C.R.2
  • 3
    • 0000576612 scopus 로고
    • Ractification and space-charge-limited currents in CdS films
    • Dresner J, Shallcross F V. Ractification and space-charge-limited currents in CdS films. Solid-State Electronics, 1962, 5(4): 205-210.
    • (1962) Solid-State Electronics , vol.5 , Issue.4 , pp. 205-210
    • Dresner, J.1    Shallcross, F.V.2
  • 4
    • 0001563946 scopus 로고    scopus 로고
    • Electrical properties of CdS and CdSe films deposited on vibrating substrates
    • Mohanchandra K P, Uchil J. Electrical properties of CdS and CdSe films deposited on vibrating substrates. Journal of Applied Physics, 1998, 84(1): 306-310.
    • (1998) Journal of Applied Physics , vol.84 , Issue.1 , pp. 306-310
    • Mohanchandra, K.P.1    Uchil, J.2
  • 7
    • 0030190176 scopus 로고    scopus 로고
    • MO(GS)MBE and photo-MO(GS)MBE of II-VI semiconductors
    • Fujita S, Kawakami Y. MO(GS)MBE and photo-MO(GS)MBE of II-VI semiconductors. Journal of Crystal Growth, 1996, 164(1-4): 196-201.
    • (1996) Journal of Crystal Growth , vol.164 , Issue.1-4 , pp. 196-201
    • Fujita, S.1    Kawakami, Y.2
  • 9
    • 0029306124 scopus 로고
    • Morphological features in films of CdS prepared by chemical spray pyrolysis
    • Pence S, Bates C W Jr, Varner L. Morphological features in films of CdS prepared by chemical spray pyrolysis. Materials Letters, 1995, 23(4-6): 195-201.
    • (1995) Materials Letters , vol.23 , Issue.4-6 , pp. 195-201
    • Pence, S.1    Bates Jr., C.W.2    Varner, L.3
  • 10
    • 72649089481 scopus 로고    scopus 로고
    • Effects of electrodeposition periods and solution temperatures towards the properties of CdS thin films prepared in the presence of sodium Tartrate
    • Anuar K, Zulkarnain Z, Saravanan N, Nazri M, Sharin R. Effects of electrodeposition periods and solution temperatures towards the properties of CdS thin films prepared in the presence of sodium Tartrate. Materials Science, 2005, 11(2): 101-104.
    • (2005) Materials Science , vol.11 , Issue.2 , pp. 101-104
    • Anuar, K.1    Zulkarnain, Z.2    Saravanan, N.3    Nazri, M.4    Sharin, R.5
  • 11
    • 34247387879 scopus 로고    scopus 로고
    • 2 treatment on the properties of CdS films prepared by r.f. magnetron sputtering
    • 2 treatment on the properties of CdS films prepared by r. f. magnetron sputtering. Thin Solid Films, 2007, 515(15): 6055-6059.
    • (2007) Thin Solid Films , vol.515 , Issue.15 , pp. 6055-6059
    • Lee, J.H.1    Lee, D.J.2
  • 12
    • 0031168377 scopus 로고    scopus 로고
    • Physical and electrical characterization of CdS films deposited by vacuum evaporation, solution growth and spray pyrolysis
    • Chavez H, Jorden M, McClure J C, Lush G, Singh V P. Physical and electrical characterization of CdS films deposited by vacuum evaporation, solution growth and spray pyrolysis. Journal of Materials Science Materials in Electronics, 1997, 8(3): 151-154.
    • (1997) Journal of Materials Science Materials in Electronics , vol.8 , Issue.3 , pp. 151-154
    • Chavez, H.1    Jorden, M.2    McClure, J.C.3    Lush, G.4    Singh, V.P.5
  • 14
    • 0032607058 scopus 로고    scopus 로고
    • Interface characterization of nanocrystalline CdS/Au junction by current-voltage and capacitance-voltage studies
    • Patel B K, Nanda K K, Sahu S N. Interface characterization of nanocrystalline CdS/Au junction by current-voltage and capacitance-voltage studies. Journal of Applied Physics, 1999, 85(7): 3666-3670.
    • (1999) Journal of Applied Physics , vol.85 , Issue.7 , pp. 3666-3670
    • Patel, B.K.1    Nanda, K.K.2    Sahu, S.N.3
  • 16
    • 66949132997 scopus 로고    scopus 로고
    • Electrical and photovoltaic characteristics of Al/n-CdS Schottky diode
    • Farag A A M, Yahia I S, Fadel M. Electrical and photovoltaic characteristics of Al/n-CdS Schottky diode. International Journal of Hydrogen Energy, 2009, 34(11): 4906-4913.
    • (2009) International Journal of Hydrogen Energy , vol.34 , Issue.11 , pp. 4906-4913
    • Farag, A.A.M.1    Yahia, I.S.2    Fadel, M.3
  • 20
    • 0036139309 scopus 로고    scopus 로고
    • Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular epitaxy GaAs
    • Gümüs A, Türüt A, Yalcin N. Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular epitaxy GaAs. Journal of Applied Physics, 2002, 91(1): 245-250.
    • (2002) Journal of Applied Physics , vol.91 , Issue.1 , pp. 245-250
    • Gümüs, A.1    Türüt, A.2    Yalcin, N.3
  • 21
    • 0029516026 scopus 로고
    • Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range
    • Chand S, Kumar J. Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range. Semiconductor Science and Technology, 1995, 10(12): 1680-1688.
    • (1995) Semiconductor Science and Technology , vol.10 , Issue.12 , pp. 1680-1688
    • Chand, S.1    Kumar, J.2
  • 22
    • 0345972127 scopus 로고
    • Electron transport of inhomogeneous Schottky barriers
    • Tung R T. Electron transport of inhomogeneous Schottky barriers. Applied Physics Letters, 1991, 58(24): 2821-2823.
    • (1991) Applied Physics Letters , vol.58 , Issue.24 , pp. 2821-2823
    • Tung, R.T.1
  • 23
    • 3342986527 scopus 로고
    • Electron transport at metal-semiconductor interfaces: general theory
    • Tung R T. Electron transport at metal-semiconductor interfaces: general theory. Physical Review B, 1992, 45(23): 13509-13523.
    • (1992) Physical Review B , vol.45 , Issue.23 , pp. 13509-13523
    • Tung, R.T.1
  • 25
    • 36449000058 scopus 로고
    • Barrier inhomogeneities at Schottky contacts
    • Werner J H, Güttler H H. Barrier inhomogeneities at Schottky contacts. Journal of Applied Physics, 1991, 69(3): 1522-1533.
    • (1991) Journal of Applied Physics , vol.69 , Issue.3 , pp. 1522-1533
    • Werner, J.H.1    Güttler, H.H.2
  • 26
    • 0000499612 scopus 로고
    • Electron transport of inhomogeneous Schottky barriers: a numerical study
    • Sullivan J P, Tung R T, Pinto M R, Graham WR. Electron transport of inhomogeneous Schottky barriers: a numerical study. Journal of Applied Physics, 1991, 70(12): 7403-7424.
    • (1991) Journal of Applied Physics , vol.70 , Issue.12 , pp. 7403-7424
    • Sullivan, J.P.1    Tung, R.T.2    Pinto, M.R.3    Graham, W.R.4
  • 27
    • 33846031406 scopus 로고    scopus 로고
    • Effect of temperature and electron irradiation on the I-V characteristics of Au/CdTe Schottky diodes
    • Pattabi M, Krishnan S, Ganesh, Mathew X. Effect of temperature and electron irradiation on the I-V characteristics of Au/CdTe Schottky diodes. Solar Energy, 2007, 81(1): 111-116.
    • (2007) Solar Energy , vol.81 , Issue.1 , pp. 111-116
    • Pattabi, M.1    Krishnan, S.2    Ganesh3    Mathew, X.4
  • 29
    • 4544366026 scopus 로고    scopus 로고
    • Temperature dependent barrier characteristics of Ag/p-SnS Schottky barrier diodes
    • Karadeniz S, Sahin M, Tugluoglu N, Safak H. Temperature dependent barrier characteristics of Ag/p-SnS Schottky barrier diodes. Semiconductor Science and Technology, 2004, 19(9): 1098-1103.
    • (2004) Semiconductor Science and Technology , vol.19 , Issue.9 , pp. 1098-1103
    • Karadeniz, S.1    Sahin, M.2    Tugluoglu, N.3    Safak, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.