Current transport mechanisms in n-type amorphous silicon-carbon on p-type crystalline silicon (a-Si0.8C0.2:H/c-Si) heterojunction diodes

Semiconductor Science and Technology

Volumn 13, Issue 10, 1998, Pages 1148-1153

  Marsal, L F ^a   Pallares J ^a   Correig, X ^a   Orpella, A ^b   Bardes D ^b   Alcubilla, R ^b  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS;

AMORPHOUS SILICON-CARBON; CURRENT TRANSPORT MECHANISMS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032179754     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/10/016     Document Type: Article

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