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Volumn 164, Issue 1-4, 1996, Pages 196-201
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MO(GS)MBE and photo-MO(GS)MBE of II-VI semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
DOPING (ADDITIVES);
ENERGY GAP;
IRRADIATION;
MOLECULAR BEAM EPITAXY;
MULTILAYERS;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR QUANTUM WELLS;
BANDGAP PHOTOIRRADIATION;
GAS SOURCE MOLECULAR BEAM EPITAXY;
METALLORGANIC MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ZINC COMPOUNDS;
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EID: 0030190176
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)01061-0 Document Type: Article |
Times cited : (13)
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References (31)
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