Spherical crystallization of Si during free fall in drop-tubes

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 722-726

  Kuribayashi, K ^a   Nagashio, K ^a   Tajima, M ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

A1. Nucleation; A1. Undercooling; A2. Spherical crystallization; B2. Semiconducting silicon

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALLIZATION; CRYSTALS; DISSOLUTION; DROPS; NANOCRYSTALLINE ALLOYS; NUCLEATION; RAPID SOLIDIFICATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPHERES; SURFACE MORPHOLOGY; SURFACES; UNDERCOOLING;

A1. NUCLEATION; A1. UNDERCOOLING; A2. SPHERICAL CRYSTALLIZATION; B2. SEMICONDUCTING SILICON; CRYSTALLINITY; FREE FALLS; IMPURITY BANDS; PHOTOLUMINESCENCE SPECTRUM; REFERENCE MATERIALS; ROUGH SURFACES; SMOOTH SURFACES; SOLUBILITY PRODUCTS; UNDERCOOLED MELTS;

SEMICONDUCTING SILICON;

EID: 59749093865     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.149     Document Type: Article

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