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Volumn , Issue , 2010, Pages 1505-1508

A 24-GHz 3.8-dB NF low-noise amplifier with built-in linearizer

Author keywords

CMOS; K band; linearizer; low noise amplifier (LNA)

Indexed keywords

CMOS; CMOS TECHNOLOGY; DC POWER; HIGH FREQUENCY; K-BAND; LINEARIZATION TECHNIQUE; LINEARIZER; LINEARIZERS; LOW NOISE AMPLIFIER (LNA); MEASURED RESULTS; PEAK GAIN;

EID: 79955721479     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (10)
  • 1
    • 56849110392 scopus 로고    scopus 로고
    • A linearization technique for RF receiver front-end using second-order-intermodulation injection
    • Nov.
    • S. Lou and H. C. Luong, "A linearization technique for RF receiver front-end using second-order-intermodulation injection," IEEE J. Solid-State Circuits, vol. 43, pp. 2404-2412, Nov. 2008.
    • (2008) IEEE J. Solid-state Circuits , vol.43 , pp. 2404-2412
    • Lou, S.1    Luong, H.C.2
  • 2
    • 4344655384 scopus 로고    scopus 로고
    • Linearization of CMOS LNAs via optimum gate biasing
    • Vancouver, BC, Canada May
    • V. Aparin, G. Brown, and L. E. Larson, "Linearization of CMOS LNAs via optimum gate biasing," in IEEE Int. Circuits Syst. Symp., Vancouver, BC, Canada, vol. 4, pp. 748-751, May 2004.
    • (2004) IEEE Int. Circuits Syst. Symp. , vol.4 , pp. 748-751
    • Aparin, V.1    Brown, G.2    Larson, L.E.3
  • 3
    • 59349102867 scopus 로고    scopus 로고
    • A low-power, linearized, ultra-wideband LNA design technique
    • Feb.
    • H. Zhang, X. Fan and E. S. Sinencio, "A low-power, linearized, ultra-wideband LNA design technique," IEEE J. Solid-State Circuits, vol. 44, pp. 320-330, Feb. 2009.
    • (2009) IEEE J. Solid-state Circuits , vol.44 , pp. 320-330
    • Zhang, H.1    Fan, X.2    Sinencio, E.S.3
  • 4
    • 14544284511 scopus 로고    scopus 로고
    • Modified derivative superposition method for linearizing FET low-noise amplifiers
    • Feb.
    • V. Aparin and L. E. Larson, "Modified derivative superposition method for linearizing FET low-noise amplifiers," IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 571-581, Feb. 2005.
    • (2005) IEEE Trans. Microw. Theory Tech. , vol.53 , Issue.2 , pp. 571-581
    • Aparin, V.1    Larson, L.E.2
  • 7
    • 60449090918 scopus 로고    scopus 로고
    • A low-power low-noise amplifier for K-band applications
    • Feb.
    • Y.-L. Wei, S. S. H. Hsu, J.-D. Jin, "A low-power low-noise amplifier for K-band applications," IEEE Microw. Wireless Compon. Lett., vol. 19, no.2, pp. 116-118, Feb. 2009.
    • (2009) IEEE Microw. Wireless Compon. Lett. , vol.19 , Issue.2 , pp. 116-118
    • Wei, Y.-L.1    Hsu, S.S.H.2    Jin, J.-D.3
  • 8
    • 23844543104 scopus 로고    scopus 로고
    • A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology
    • DOI 10.1109/LMWC.2005.851552
    • S.-C. Shin, M.-D. Tsai, R.-C. Liu, K.-Y. Lin, and H. Wang, "A 24-GHz 3.9-dB NF low-noise amplifier Using 0.18 μm CMOS technology," IEEE Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 448-450, Jul. 2005. (Pubitemid 41164453)
    • (2005) IEEE Microwave and Wireless Components Letters , vol.15 , Issue.7 , pp. 448-450
    • Shin, S.-C.1    Tsai, M.-D.2    Liu, R.-C.3    Lin, K.-Y.4    Wang, H.5
  • 9
    • 51849083480 scopus 로고    scopus 로고
    • A 25 GHz 3.3 dB NF low noise amplifier based upon slow wave transmission lines and the 0.18 μm CMOS technology
    • Jun.
    • A. Sayag, S. Levin, D. Regev, D. Zfira, S. Shapira, D. Goren and D. Ritter, "A 25 GHz 3.3 dB NF low noise amplifier based upon slow wave transmission lines and the 0.18 μm CMOS technology," IEEE RFIC Symposium Digest, pp. 373-376, Jun. 2008.
    • (2008) IEEE RFIC Symposium Digest , pp. 373-376
    • Sayag, A.1    Levin, S.2    Regev, D.3    Zfira, D.4    Shapira, S.5    Goren, D.6    Ritter, D.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.