-
1
-
-
56849110392
-
A linearization technique for RF receiver front-end using second-order-intermodulation injection
-
Nov.
-
S. Lou and H. C. Luong, "A linearization technique for RF receiver front-end using second-order-intermodulation injection," IEEE J. Solid-State Circuits, vol. 43, pp. 2404-2412, Nov. 2008.
-
(2008)
IEEE J. Solid-state Circuits
, vol.43
, pp. 2404-2412
-
-
Lou, S.1
Luong, H.C.2
-
2
-
-
4344655384
-
Linearization of CMOS LNAs via optimum gate biasing
-
Vancouver, BC, Canada May
-
V. Aparin, G. Brown, and L. E. Larson, "Linearization of CMOS LNAs via optimum gate biasing," in IEEE Int. Circuits Syst. Symp., Vancouver, BC, Canada, vol. 4, pp. 748-751, May 2004.
-
(2004)
IEEE Int. Circuits Syst. Symp.
, vol.4
, pp. 748-751
-
-
Aparin, V.1
Brown, G.2
Larson, L.E.3
-
3
-
-
59349102867
-
A low-power, linearized, ultra-wideband LNA design technique
-
Feb.
-
H. Zhang, X. Fan and E. S. Sinencio, "A low-power, linearized, ultra-wideband LNA design technique," IEEE J. Solid-State Circuits, vol. 44, pp. 320-330, Feb. 2009.
-
(2009)
IEEE J. Solid-state Circuits
, vol.44
, pp. 320-330
-
-
Zhang, H.1
Fan, X.2
Sinencio, E.S.3
-
4
-
-
14544284511
-
Modified derivative superposition method for linearizing FET low-noise amplifiers
-
Feb.
-
V. Aparin and L. E. Larson, "Modified derivative superposition method for linearizing FET low-noise amplifiers," IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 571-581, Feb. 2005.
-
(2005)
IEEE Trans. Microw. Theory Tech.
, vol.53
, Issue.2
, pp. 571-581
-
-
Aparin, V.1
Larson, L.E.2
-
5
-
-
33847717518
-
A highly linear low-noise amplifier
-
DOI 10.1109/TMTT.2006.885889
-
S. Ganesan, E. S. Sinencio, and J. S. Martinez "A highly linear low-noise amplifier," IEEE Trans. Microw. Theory Tech., vol. 54, pp. 4079-4085, Dec. 2006. (Pubitemid 46372415)
-
(2006)
IEEE Transactions on Microwave Theory and Techniques
, vol.54
, Issue.12
, pp. 4079-4085
-
-
Ganesan, S.1
Sanchez-Sinencio, E.2
Silva-Martinez, J.3
-
6
-
-
67649277695
-
A 1 V 23 GHz low-noise amplifier in 45 nm planar bulk-CMOS technology with high-Q above-IC inductors
-
May
-
W.-C. Wang, Z.-D. Huang, G. Carchon, A. Mercha, S. Decoutere, W. De Raedt, C.-Y. Wu, "A 1 V 23 GHz low-noise amplifier in 45 nm planar bulk-CMOS technology with high-Q above-IC inductors," IEEE Microw. Wireless Compon. Lett., vol. 19, no.5, pp.326-328, May 2009.
-
(2009)
IEEE Microw. Wireless Compon. Lett.
, vol.19
, Issue.5
, pp. 326-328
-
-
Wang, W.-C.1
Huang, Z.-D.2
Carchon, G.3
Mercha, A.4
Decoutere, S.5
De Raedt, W.6
Wu, C.-Y.7
-
7
-
-
60449090918
-
A low-power low-noise amplifier for K-band applications
-
Feb.
-
Y.-L. Wei, S. S. H. Hsu, J.-D. Jin, "A low-power low-noise amplifier for K-band applications," IEEE Microw. Wireless Compon. Lett., vol. 19, no.2, pp. 116-118, Feb. 2009.
-
(2009)
IEEE Microw. Wireless Compon. Lett.
, vol.19
, Issue.2
, pp. 116-118
-
-
Wei, Y.-L.1
Hsu, S.S.H.2
Jin, J.-D.3
-
8
-
-
23844543104
-
A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology
-
DOI 10.1109/LMWC.2005.851552
-
S.-C. Shin, M.-D. Tsai, R.-C. Liu, K.-Y. Lin, and H. Wang, "A 24-GHz 3.9-dB NF low-noise amplifier Using 0.18 μm CMOS technology," IEEE Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 448-450, Jul. 2005. (Pubitemid 41164453)
-
(2005)
IEEE Microwave and Wireless Components Letters
, vol.15
, Issue.7
, pp. 448-450
-
-
Shin, S.-C.1
Tsai, M.-D.2
Liu, R.-C.3
Lin, K.-Y.4
Wang, H.5
-
9
-
-
51849083480
-
A 25 GHz 3.3 dB NF low noise amplifier based upon slow wave transmission lines and the 0.18 μm CMOS technology
-
Jun.
-
A. Sayag, S. Levin, D. Regev, D. Zfira, S. Shapira, D. Goren and D. Ritter, "A 25 GHz 3.3 dB NF low noise amplifier based upon slow wave transmission lines and the 0.18 μm CMOS technology," IEEE RFIC Symposium Digest, pp. 373-376, Jun. 2008.
-
(2008)
IEEE RFIC Symposium Digest
, pp. 373-376
-
-
Sayag, A.1
Levin, S.2
Regev, D.3
Zfira, D.4
Shapira, S.5
Goren, D.6
Ritter, D.7
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