V-doped ZnO thin films prepared by RF magnetron sputtering

Ferroelectrics

Volumn 406, Issue 1, 2010, Pages 10-15

  Shao, W D ^a   Chen, X F ^a,b   Ren, W ^a   Shi, P ^a   Wu, X Q ^a   Tan, O K ^b   Zhu, W G ^b   Yao, X ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Piezoelectric; Sputtering; V doped ZnO films

Indexed keywords

CONDUCTION MECHANISM; DIELECTRIC CONSTANTS; LATTICE PARAMETERS; PIEZOELECTRIC; PREFERRED ORIENTATIONS; RF-MAGNETRON SPUTTERING; SI SUBSTRATES; SPACE-CHARGE-LIMITED; V-DOPED ZNO; X-RAY DIFFRACTION STUDIES; ZNO THIN FILM;

DIELECTRIC LOSSES; ELECTRIC FIELDS; FERROELECTRICITY; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; PIEZOELECTRICITY; SILICON COMPOUNDS; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

FILM PREPARATION;

EID: 79955698022     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150193.2010.484319     Document Type: Conference Paper

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