Improvement of sub-threshold current models for a-Si:H thin-film transistors

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 703-707

  Wang, Lijuan ^a   Zhu, Jiang ^a   Liu, Chunling ^a   Liu, Guojun ^a   Shao, Xibin ^b   Yan, Donghang ^c  

^a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

^c CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

a Si:H TFT; Drain source voltage; Model; Sub threshold

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; THRESHOLD VOLTAGE;

DRAIN SOURCE VOLTAGE; ELECTRON DISTRIBUTION; GATE SOURCE VOLTAGE; SUB THRESHOLD;

THIN FILM TRANSISTORS;

EID: 34248561749     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.030     Document Type: Article

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