High-power 2.2-μm diode lasers with heavily strained active region

IEEE Photonics Technology Letters

Volumn 23, Issue 10, 2011, Pages 603-605

  Liang, Rui ^a   Chen, Jianfeng ^a   Kipshidze, Gela ^a   Westerfeld, David ^b   Shterengas, Leon ^a   Belenky, Gregory ^a  

^a Stony Brook University   (United States)

^b Power Photonic   (United States)

Author keywords

Compressive strain; diode lasers; GaSb; high power lasers; laser arrays

Indexed keywords

ACTIVE REGIONS; CARRIER CONFINEMENTS; COMPRESSIVE STRAIN; CONTINUOUS WAVE OUTPUT POWER; CONTINUOUS WAVES; DEVICE ACTIVE REGION; DIFFERENTIAL GAIN; DIODE LASERS; GAINASSB; GASB; HETEROSTRUCTURES; HIGH-POWER; LASER ARRAYS; LINEAR LASERS; MAXIMUM OUTPUT POWER; MULTIMODES; POWER CONVERSION EFFICIENCIES; QUANTUM WELL; ROOM TEMPERATURE; SOLID SOURCE MOLECULAR BEAM EPITAXY; WAVEGUIDE DESIGN;

CONTINUOUS WAVE LASERS; CONVERSION EFFICIENCY; DIODES; EXTRATERRESTRIAL ATMOSPHERES; GALLIUM ALLOYS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

QUANTUM WELL LASERS;

EID: 79955546309     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2114647     Document Type: Article

References (15)

1. D. Z. Garbuzov et al., "Ultralow-loss broadened-waveguide high-power 2 μm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers", Appl. Phys. Lett., vol. 69, pp. 2006-2008, 1996. (Pubitemid 126620382)
2. D. Z. Garbuzov, H. Lee, V. Khalfin, R. Martinelli, J. C. Connoly, and G. L. Belenky, "2.3-2.7 m room temperature CW operation of In-GaAsSb/AlGaAsSb broad waveguide SCH-QW diode lasers", IEEE Photon. Technol. Lett., vol. 11, no. 7, pp. 794-796, Jul. 1999.
3. Y. Rouillard et al., "Edge and vertical surface emitting lasers around 2.0-2.5 m and their applications", Phil. Trans. R. Soc., vol. 359, pp. 581-597, 2001.
4. G. W. Turner, H. K. Choi, and M. J. Manfra, "Ultralow-threshold.50 A cm strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 m", Appl. Phys. Lett., vol. 72, pp. 876-878, 1998. (Pubitemid 128674079)
5. M. Garcia, A. Salhi, A. Perona, Y. Rouillard, C. Sirtori, X. Marcadet, and C. Alibert, "Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 m", IEEE Photon. Technol. Lett., vol. 16, no. 5, pp. 1253-1255, May 2004.
6. L. Shterengas et al., "High power 2.3 m GaSb-based linear laser array", IEEE Photon. Technol. Lett., vol. 16, no. 10, pp. 2218-2220, Oct. 2004.
7. L. Shterengas, G. Belenky, M. V. Kisin, and D. Donetsky, "High power 2.4 m heavily strained type-I quantum well GaSb-based diode lasers with more than 1 W of continuous wave output power and a maximum power-conversion efficiency of 17.5%", Appl. Phys. Lett., vol. 90, pp. 011119-1-01119-3, 2007.
8. M. T. Kelemen, J. Gilly, M. Haag, J. Biesenbach, M. Rattunde, and J. Wagner, "Diode laser arrays for 1.8 to 2.3 m wavelength range", Proc. SPIE, vol. 7230, pp. 72301K-1-72301K-9, 2009.
9. J. Chen, G. Kipshidze, and L. Shterengas, "High-power 2 m diode lasers with asymmetric waveguide", IEEE J. Quantum Electron., vol. 46, no. 10, pp. 1464-1469, Oct. 2010.
10. S. Simanowski et al., "Strain adjustment in (GaIn) (AsSb)/(AlGa) (AsSb) QWs for 2.3-2.7 m laser structures", J. Cryst. Growth, vol. 209, pp. 15-20, 2000. (Pubitemid 30527028)
11. J. Chen, D. Donetsky, L. Shterengas, M. Kisin, G. Kipshidze, and G. Belenky, "Effect of quantum well compressive strain above 1% on differential gain and threshold current density in type-I GaSb-based diode lasers", IEEE J. Quantum Electron, vol. 44, no. 12, pp. 1204-1210, Dec. 2008.
12. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys", J. Appl. Phys., vol. 89, pp. 5815-5875, 2001. (Pubitemid 33599303)
13. G. P. Donati, R. Kaspi, and K. J. Malloy, "Interpolating semiconductor alloy parameters: Application to quaternary III-V band gaps", J. Appl. Phys., vol. 94, pp. 5814-5819, 2003.
14. C. Alibert, M. Skouri, A. Joullie, M. Benouna, and S. Sadiq, "Refractive indices of AlSb and GaSb-lattice-matched Al Ga as Sb in the transparent wavelength region", J. Appl. Phys., vol. 69, pp. 3208-3211, 1991.
15. B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs double-heterojunction injection lasers", J. Appl. Phys., vol. 46, pp. 1299-1306, 1975.